Vishay/Siliconix IRFBE30L
- Mfg. Part Number
- IRFBE30L
- Manufacturer
- Vishay/Siliconix
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 800V 4.1A TO-262
- Datasheet Download
- IRFBE30L.pdf
Availability of IRFBE30L
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- N/A
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IRFBE30L, we specialize in Vishay/Siliconix all series electronic components. IRFBE30L can be shipped within 24 hours after order. If you have any demands for IRFBE30L, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IRFBE30L Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IRFBE30L
| Internal Part Number | EIS-IRFBE30L | |
| Lead Free Status / RoHS Status | Contains lead / RoHS non-compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 50 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 4.1A (Tc) | |
| Rds On (Max) @ Id, Vgs | 3 Ohm @ 2.5A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 78nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 1300pF @ 25V | |
| Power - Max | 125W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-262-3 Long Leads, I²Pak, TO-262AA | |
| Supplier Device Package | I2PAK | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IRFBE30L | |
| Related Links | IRFB, IRFBE30L Datasheet, Vishay/Siliconix Distributor | |
IRFBE30L Details Description
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