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International Rectifier (Infineon Technologies Americas Corp.) IRFHM8326TRPBF

IRFHM8326TRPBF picture photo
Mfg. Part Number
IRFHM8326TRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 25A PQFN
Datasheet Download
IRFHM8326TRPBF.pdf
Availability of IRFHM8326TRPBF

Available Quantity

8570 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.26765
Our Price
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EIS Components is the stocking Distributor of IRFHM8326TRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRFHM8326TRPBF can be shipped within 24 hours after order. If you have any demands for IRFHM8326TRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRFHM8326TRPBF Order Process
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Specifications of IRFHM8326TRPBF
Internal Part NumberEIS-IRFHM8326TRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesDiscrete Power MOSFETs 40V and Below
PCN Assembly/OriginBackend Wafer Transfer 23/Oct/2013
Assembly Site Transfer 15/Oct/2014
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C19A (Ta)
Rds On (Max) @ Id, Vgs4.7 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.2V @ 50µA
Gate Charge (Qg) @ Vgs39nC @ 10V
Input Capacitance (Ciss) @ Vds2496pF @ 10V
Power - Max2.8W
Mounting TypeSurface Mount
Package / Case8-PowerTDFN
Supplier Device Package*
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRFHM8326TRPBF
Related LinksIRFHM83, IRFHM8326TRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRFHM8326TRPBF Details Description
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