International Rectifier (Infineon Technologies Americas Corp.) IRFR4105ZTRPBF

IRFR4105ZTRPBF picture photo
Mfg. Part Number
IRFR4105ZTRPBF
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 55V 30A DPAK
Datasheet Download
IRFR4105ZTRPBF.pdf
Availability of IRFR4105ZTRPBF

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.41375
Our Price
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EIS Components is the stocking Distributor of IRFR4105ZTRPBF, we specialize in International Rectifier (Infineon Technologies Americas Corp.) all series electronic components. IRFR4105ZTRPBF can be shipped within 24 hours after order. If you have any demands for IRFR4105ZTRPBF, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
IRFR4105ZTRPBF Order Process
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Specifications of IRFR4105ZTRPBF
Internal Part NumberEIS-IRFR4105ZTRPBF
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage Integrated Circuits (HVIC Gate Drivers)
PCN Assembly/OriginBackend Wafer Transfer 23/Oct/2013
PCN PackagingPackage Drawing Update 19/Aug/2015
Standard Package2,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesHEXFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25°C30A (Tc)
Rds On (Max) @ Id, Vgs24.5 mOhm @ 18A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs27nC @ 10V
Input Capacitance (Ciss) @ Vds740pF @ 25V
Power - Max48W
Mounting TypeSurface Mount
Package / CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device PackageD-Pak
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)IRFR4105ZTRPBF
Related LinksIRFR410, IRFR4105ZTRPBF Datasheet, International Rectifier (Infineon Technologies Americas Corp.) Distributor
IRFR4105ZTRPBF Details Description
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