IXYS Corporation IXFQ10N80P
- Mfg. Part Number
- IXFQ10N80P
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 800V 10A TO-3P
- Datasheet Download
- IXFQ10N80P.pdf
Availability of IXFQ10N80P
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 2.79000
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXFQ10N80P, we specialize in IXYS Corporation all series electronic components. IXFQ10N80P can be shipped within 24 hours after order. If you have any demands for IXFQ10N80P, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXFQ10N80P Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXFQ10N80P
| Internal Part Number | EIS-IXFQ10N80P | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HiPerFET™, PolarHT™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | |
| Rds On (Max) @ Id, Vgs | 1.1 Ohm @ 5A, 10V | |
| Vgs(th) (Max) @ Id | 5.5V @ 2.5mA | |
| Gate Charge (Qg) @ Vgs | 40nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 2050pF @ 25V | |
| Power - Max | 300W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-3P-3, SC-65-3 | |
| Supplier Device Package | TO-3P | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXFQ10N80P | |
| Related Links | IXFQ1, IXFQ10N80P Datasheet, IXYS Corporation Distributor | |
IXFQ10N80P Details Description
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