IXYS Corporation IXFR27N80Q
- Mfg. Part Number
- IXFR27N80Q
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 800V 27A ISOPLUS247
- Datasheet Download
- IXFR27N80Q.pdf
Availability of IXFR27N80Q
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 18.00067
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXFR27N80Q, we specialize in IXYS Corporation all series electronic components. IXFR27N80Q can be shipped within 24 hours after order. If you have any demands for IXFR27N80Q, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXFR27N80Q Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXFR27N80Q
| Internal Part Number | EIS-IXFR27N80Q | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HiPerFET™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 800V | |
| Current - Continuous Drain (Id) @ 25°C | 27A (Tc) | |
| Rds On (Max) @ Id, Vgs | 300 mOhm @ 13.5A, 10V | |
| Vgs(th) (Max) @ Id | 4.5V @ 4mA | |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 7600pF @ 25V | |
| Power - Max | 500W | |
| Mounting Type | Through Hole | |
| Package / Case | ISOPLUS247™ | |
| Supplier Device Package | ISOPLUS247™ | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXFR27N80Q | |
| Related Links | IXFR2, IXFR27N80Q Datasheet, IXYS Corporation Distributor | |
IXFR27N80Q Details Description
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