IXYS Corporation IXFT80N08
- Mfg. Part Number
- IXFT80N08
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 80V 80A TO-268
- Datasheet Download
- IXFT80N08.pdf
Availability of IXFT80N08
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 12.06200
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXFT80N08, we specialize in IXYS Corporation all series electronic components. IXFT80N08 can be shipped within 24 hours after order. If you have any demands for IXFT80N08, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXFT80N08 Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXFT80N08
| Internal Part Number | EIS-IXFT80N08 | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 30 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | HiPerFET™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 80V | |
| Current - Continuous Drain (Id) @ 25°C | 80A (Tc) | |
| Rds On (Max) @ Id, Vgs | 9 mOhm @ 40A, 10V | |
| Vgs(th) (Max) @ Id | 4V @ 4mA | |
| Gate Charge (Qg) @ Vgs | 180nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4800pF @ 25V | |
| Power - Max | 300W | |
| Mounting Type | Surface Mount | |
| Package / Case | TO-268-3, D³Pak (2 Leads + Tab), TO-268AA | |
| Supplier Device Package | TO-268 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXFT80N08 | |
| Related Links | IXFT, IXFT80N08 Datasheet, IXYS Corporation Distributor | |
IXFT80N08 Details Description
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