IXYS Corporation IXTK82N25P
- Mfg. Part Number
- IXTK82N25P
- Manufacturer
- IXYS Corporation
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 250V 82A TO-264
- Datasheet Download
- IXTK82N25P.pdf
Availability of IXTK82N25P
Available Quantity
5020 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 5.86320
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of IXTK82N25P, we specialize in IXYS Corporation all series electronic components. IXTK82N25P can be shipped within 24 hours after order. If you have any demands for IXTK82N25P, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- IXTK82N25P Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
IXTK82N25P
| Internal Part Number | EIS-IXTK82N25P | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 25 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | PolarHT™ | |
| Packaging | Tube | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 250V | |
| Current - Continuous Drain (Id) @ 25°C | 82A (Tc) | |
| Rds On (Max) @ Id, Vgs | 35 mOhm @ 41A, 10V | |
| Vgs(th) (Max) @ Id | 5V @ 250µA | |
| Gate Charge (Qg) @ Vgs | 142nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 4800pF @ 25V | |
| Power - Max | 500W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-264-3, TO-264AA | |
| Supplier Device Package | TO-264 (IXTK) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | IXTK82N25P | |
| Related Links | IXTK8, IXTK82N25P Datasheet, IXYS Corporation Distributor | |
IXTK82N25P Details Description
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