Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-MB85R256FPFCN-G-BNDE1 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Featured Product | FRAM (Ferroelectric RAM) | |
PCN Assembly/Origin | New Package Specifications 12/May/2015 | |
Standard Package | 500 | |
Category | Integrated Circuits (ICs) | |
Family | Memory | |
Series | - | |
Packaging | Tray | |
Format - Memory | RAM | |
Memory Type | FRAM (Ferroelectric RAM) | |
Memory Size | 256K (32K x 8) | |
Speed | 150ns | |
Interface | Parallel | |
Voltage - Supply | 2.7 V ~ 3.6 V | |
Operating Temperature | -40°C ~ 85°C | |
Package / Case | 28-TSSOP (0.465", 11.80mm Width) | |
Supplier Device Package | 28-TSOP I | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | MB85R256FPFCN-G-BNDE1 | |
Related Links | MB85R256FP, MB85R256FPFCN-G-BNDE1 Datasheet, Fujitsu Semiconductor America Inc. Distributor |
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