ON Semiconductor MJD112-1G

MJD112-1G picture photo
Mfg. Part Number
MJD112-1G
Manufacturer
Product Category
Transistors (BJT) - Single
Brief Description
TRANS NPN DARL 100V 2A IPAK
Datasheet Download
MJD112-1G.pdf
Availability of MJD112-1G

Available Quantity

9463 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.23817
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of MJD112-1G, we specialize in ON Semiconductor all series electronic components. MJD112-1G can be shipped within 24 hours after order. If you have any demands for MJD112-1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
MJD112-1G Order Process
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Specifications of MJD112-1G
Internal Part NumberEIS-MJD112-1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package75
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single
Series-
PackagingTube
Transistor TypeNPN - Darlington
Current - Collector (Ic) (Max)2A
Voltage - Collector Emitter Breakdown (Max)100V
Vce Saturation (Max) @ Ib, Ic3V @ 40mA, 4A
Current - Collector Cutoff (Max)20µA
DC Current Gain (hFE) (Min) @ Ic, Vce1000 @ 2A, 3V
Power - Max1.75W
Frequency - Transition25MHz
Mounting TypeThrough Hole
Package / CaseTO-251-3 Short Leads, IPak, TO-251AA
Supplier Device PackageI-Pak
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)MJD112-1G
Related LinksMJD1, MJD112-1G Datasheet, ON Semiconductor Distributor
MJD112-1G Details Description
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