Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-MT49H32M18SJ-25:B TR | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1,000 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | - | |
| Packaging | Tape & Reel (TR) | |
| Format - Memory | RAM | |
| Memory Type | RLDRAM 2 | |
| Memory Size | 576M (32M x 18) | |
| Speed | 3.3ns | |
| Interface | Parallel | |
| Voltage - Supply | 1.7 V ~ 1.9 V | |
| Operating Temperature | 0°C ~ 95°C | |
| Package / Case | 144-TFBGA | |
| Supplier Device Package | 144-µBGA (18.5x11) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | MT49H32M18SJ-25:B TR | |
| Related Links | MT49H32M18, MT49H32M18SJ-25:B TR Datasheet, Micron Technology Distributor | |
![]() | AD977ABN | IC ADC 16BIT 200KSPS 20-DIP | datasheet.pdf | |
![]() | 4M1-SSP1-S1/2-M6RE | SWITCH SLIDE SPDT 0.4VA 20V | datasheet.pdf | |
![]() | CRCW251216R0FKEG | RES SMD 16 OHM 1% 1W 2512 | datasheet.pdf | |
![]() | GMA30DTKD | CONN EDGECARD 60POS DIP .125 SLD | datasheet.pdf | |
![]() | FDMS7672 | MOSFET N-CH 30V 19A POWER56 | datasheet.pdf | |
![]() | C0402C472J3RALTU | CAP CER 4700PF 25V X7R 0402 | datasheet.pdf | |
![]() | RPR30-1103.3S-1B | CONV DC/DC 30W 40-160VIN 3.3VOUT | datasheet.pdf | |
![]() | V375A3V3C264BF2 | CONVERTER MOD DC/DC 3.3V 264W | datasheet.pdf | |
![]() | VE-2TT-EW-F1 | CONVERTER MOD DC/DC 6.5V 100W | datasheet.pdf | |
![]() | 8N3QV01KG-0091CDI8 | IC OSC VCXO QD FREQ 10CLCC | datasheet.pdf | |
![]() | LMD-6003-P | BUSSING MODULE 1CIRC CNTCT SZ 20 | datasheet.pdf | |
![]() | XC3090-50PC84CSPC0109 | Field Programmable Gate Array, 320 CLBs, 9000 Gates, 50MHz, CMOS, PQCC84 IC | datasheet.pdf |