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ON Semiconductor NSBA123JDP6T5G

NSBA123JDP6T5G picture photo
Mfg. Part Number
NSBA123JDP6T5G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2PNP PREBIAS 0.408W SOT963
Datasheet Download
NSBA123JDP6T5G.pdf
Availability of NSBA123JDP6T5G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.09300
Our Price
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EIS Components is the stocking Distributor of NSBA123JDP6T5G, we specialize in ON Semiconductor all series electronic components. NSBA123JDP6T5G can be shipped within 24 hours after order. If you have any demands for NSBA123JDP6T5G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSBA123JDP6T5G Order Process
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Specifications of NSBA123JDP6T5G
Internal Part NumberEIS-NSBA123JDP6T5G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationWire Bond 01/Dec/2010
Standard Package8,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max408mW
Mounting TypeSurface Mount
Package / CaseSOT-963
Supplier Device PackageSOT-963
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSBA123JDP6T5G
Related LinksNSBA123, NSBA123JDP6T5G Datasheet, ON Semiconductor Distributor
NSBA123JDP6T5G Details Description
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