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ON Semiconductor NSBC123JDXV6T1G

NSBC123JDXV6T1G picture photo
Mfg. Part Number
NSBC123JDXV6T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2NPN PREBIAS 0.5W SOT563
Datasheet Download
NSBC123JDXV6T1G.pdf
Availability of NSBC123JDXV6T1G

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of NSBC123JDXV6T1G, we specialize in ON Semiconductor all series electronic components. NSBC123JDXV6T1G can be shipped within 24 hours after order. If you have any demands for NSBC123JDXV6T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
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Specifications of NSBC123JDXV6T1G
Internal Part NumberEIS-NSBC123JDXV6T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 03/Apr/2007
PCN Assembly/OriginQualification Assembly/Test Site 25/Sep/2014
Wafer Source Addition 26/Nov/2014
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max500mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageSOT-563
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSBC123JDXV6T1G
Related LinksNSBC123, NSBC123JDXV6T1G Datasheet, ON Semiconductor Distributor
NSBC123JDXV6T1G Details Description
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