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ON Semiconductor NSVMUN5212DW1T1G

NSVMUN5212DW1T1G picture photo
Mfg. Part Number
NSVMUN5212DW1T1G
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2NPN PREBIAS 0.25W SOT363
Datasheet Download
NSVMUN5212DW1T1G.pdf
Availability of NSVMUN5212DW1T1G

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.09095
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EIS Components is the stocking Distributor of NSVMUN5212DW1T1G, we specialize in ON Semiconductor all series electronic components. NSVMUN5212DW1T1G can be shipped within 24 hours after order. If you have any demands for NSVMUN5212DW1T1G, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
NSVMUN5212DW1T1G Order Process
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Specifications of NSVMUN5212DW1T1G
Internal Part NumberEIS-NSVMUN5212DW1T1G
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Design/SpecificationGreen Compound Update 04/Mar/2015
Standard Package3,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)22k
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition-
Power - Max250mW
Mounting TypeSurface Mount
Package / Case6-TSSOP, SC-88, SOT-363
Supplier Device PackageSC-88/SC70-6/SOT-363
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)NSVMUN5212DW1T1G
Related LinksNSVMUN52, NSVMUN5212DW1T1G Datasheet, ON Semiconductor Distributor
NSVMUN5212DW1T1G Details Description
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