Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-PC28F640J3D75A | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 3 (168 Hours) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 864 | |
| Category | Integrated Circuits (ICs) | |
| Family | Memory | |
| Series | StrataFlash™ | |
| Packaging | Tray | |
| Format - Memory | FLASH | |
| Memory Type | FLASH - NOR | |
| Memory Size | 64M (8M x 8, 4M x 16) | |
| Speed | 75ns | |
| Interface | Parallel | |
| Voltage - Supply | 2.7 V ~ 3.6 V | |
| Operating Temperature | -40°C ~ 85°C | |
| Package / Case | 64-TBGA | |
| Supplier Device Package | 64-EasyBGA (10x13) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | PC28F640J3D75A | |
| Related Links | PC28F64, PC28F640J3D75A Datasheet, Micron Technology Distributor | |
![]() | 9T12062A6042DAHFT | RES SMD 60.4K OHM 0.5% 1/8W 1206 | datasheet.pdf | |
![]() | 9925500000 | CIR BRKR 63A 277VAC 50VDC | datasheet.pdf | |
![]() | IXFV30N60P | MOSFET N-CH 600V 30A PLUS220 | datasheet.pdf | |
![]() | CG2600LTR | GDT 600V 20KA THROUGH HOLE | datasheet.pdf | |
![]() | SI4178DY-T1-GE3 | MOSFET N-CH 30V 12A 8-SOIC | datasheet.pdf | |
![]() | RWR89S5600FMB12 | RES 560 OHM 3W 1% WW AXIAL | datasheet.pdf | |
![]() | B43508B5187M80 | CAP ALUM 180UF 20% 450V SNAP | datasheet.pdf | |
![]() | ESR18EZPJ275 | RES SMD 2.7M OHM 5% 1/3W 1206 | datasheet.pdf | |
![]() | 0011184139 | 6071512 INSULATION PUNCH | datasheet.pdf | |
![]() | 416F40025CDR | CRYSTAL 40.000 MHZ 18PF SMT | datasheet.pdf | |
![]() | SIT9002AC-38N18SK | OSC MEMS PROG | datasheet.pdf | |
![]() | MB75101GAN | HIGH FREQUENCY CERAMIC CAPACITORS | datasheet.pdf |