Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-PHD22NQ20T,118 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | Obsolete / Discontinued | |
Condition | New & Unused, Original Sealed | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | TrenchMOS™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 200V | |
Current - Continuous Drain (Id) @ 25°C | 21.1A (Tc) | |
Rds On (Max) @ Id, Vgs | 120 mOhm @ 12A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 1mA | |
Gate Charge (Qg) @ Vgs | 30.8nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 1380pF @ 25V | |
Power - Max | 150W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | DPAK | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | PHD22NQ20T,118 | |
Related Links | PHD22NQ, PHD22NQ20T,118 Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor |
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