NXP Semiconductors/Freescale Semiconductor, Inc. PSMN1R8-40YLC,115

PSMN1R8-40YLC,115 picture photo
Mfg. Part Number
PSMN1R8-40YLC,115
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 40V 100A LFPAK
Datasheet Download
PSMN1R8-40YLC,115.pdf
Availability of PSMN1R8-40YLC,115

Available Quantity

6520 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.40800
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of PSMN1R8-40YLC,115, we specialize in NXP Semiconductors/Freescale Semiconductor, Inc. all series electronic components. PSMN1R8-40YLC,115 can be shipped within 24 hours after order. If you have any demands for PSMN1R8-40YLC,115, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
PSMN1R8-40YLC,115 Order Process
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Specifications of PSMN1R8-40YLC,115
Internal Part NumberEIS-PSMN1R8-40YLC,115
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginWafer Fab Addition 12/Jan/2015
PCN PackagingLeader/Trailer Update 03/Apr/2015
Lighter Reel Update 29/Aug/2015
Standard Package1,500
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)40V
Current - Continuous Drain (Id) @ 25°C100A (Tc)
Rds On (Max) @ Id, Vgs1.8 mOhm @ 25A, 10V
Vgs(th) (Max) @ Id1.95V @ 1mA
Gate Charge (Qg) @ Vgs96nC @ 10V
Input Capacitance (Ciss) @ Vds6680pF @ 20V
Power - Max272W
Mounting TypeSurface Mount
Package / CaseSC-100, SOT-669, 4-LFPAK
Supplier Device PackageLFPAK56, Power-SO8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)PSMN1R8-40YLC,115
Related LinksPSMN1R8-, PSMN1R8-40YLC,115 Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor
PSMN1R8-40YLC,115 Details Description
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