NXP Semiconductors/Freescale Semiconductor, Inc. PSMN7R0-30YL,115

PSMN7R0-30YL,115 picture photo
Mfg. Part Number
PSMN7R0-30YL,115
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 76A LFPAK
Datasheet Download
PSMN7R0-30YL,115.pdf
Availability of PSMN7R0-30YL,115

Available Quantity

14020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.19356
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of PSMN7R0-30YL,115, we specialize in NXP Semiconductors/Freescale Semiconductor, Inc. all series electronic components. PSMN7R0-30YL,115 can be shipped within 24 hours after order. If you have any demands for PSMN7R0-30YL,115, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
PSMN7R0-30YL,115 Order Process
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Specifications of PSMN7R0-30YL,115
Internal Part NumberEIS-PSMN7R0-30YL,115
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Featured ProductLFPAK Trench 6 MOSFETs
PCN Design/SpecificationLFPAK Top Clip Update 19/Jun/2015
PCN PackagingLeader/Trailer Update 03/Apr/2015
Lighter Reel Update 29/Aug/2015
Standard Package1,500
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C76A (Tc)
Rds On (Max) @ Id, Vgs7 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.15V @ 1mA
Gate Charge (Qg) @ Vgs22nC @ 10V
Input Capacitance (Ciss) @ Vds1270pF @ 12V
Power - Max51W
Mounting TypeSurface Mount
Package / CaseSC-100, SOT-669, 4-LFPAK
Supplier Device PackageLFPAK56, Power-SO8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)PSMN7R0-30YL,115
Related LinksPSMN7R0-, PSMN7R0-30YL,115 Datasheet, NXP Semiconductors/Freescale Semiconductor, Inc. Distributor
PSMN7R0-30YL,115 Details Description
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