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Renesas Electronics America RJK1001DPN-E0#T2

RJK1001DPN-E0#T2 picture photo
Mfg. Part Number
RJK1001DPN-E0#T2
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 80A TO220
Datasheet Download
RJK1001DPN-E0#T2.pdf
Availability of RJK1001DPN-E0#T2

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of RJK1001DPN-E0#T2, we specialize in Renesas Electronics America all series electronic components. RJK1001DPN-E0#T2 can be shipped within 24 hours after order. If you have any demands for RJK1001DPN-E0#T2, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RJK1001DPN-E0#T2 Order Process
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Specifications of RJK1001DPN-E0#T2
Internal Part NumberEIS-RJK1001DPN-E0#T2
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLMultiple Devices 15/Aug/2013
Multiple Devices 16/Jun/2014
PCN Assembly/OriginWafer Fabrication Site Change 02/Oct/2013
Power Transistors Relocation 12/Nov/2013
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C80A (Ta)
Rds On (Max) @ Id, Vgs5.5 mOhm @ 40A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs147nC @ 10V
Input Capacitance (Ciss) @ Vds10000pF @ 10V
Power - Max200W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RJK1001DPN-E0#T2
Related LinksRJK1001D, RJK1001DPN-E0#T2 Datasheet, Renesas Electronics America Distributor
RJK1001DPN-E0#T2 Details Description
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