Toshiba Semiconductor & Storage RN1110MFV(TL3,T)
- Mfg. Part Number
- RN1110MFV(TL3,T)
- Manufacturer
- Toshiba Semiconductor & Storage
- Product Category
- Transistors (BJT) - Single, Pre-Biased
- Brief Description
- TRANS PREBIAS NPN 0.15W VESM
- Datasheet Download
- RN1110MFV(TL3,T).pdf
Availability of RN1110MFV(TL3,T)
Available Quantity
6643 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.04740
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of RN1110MFV(TL3,T), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1110MFV(TL3,T) can be shipped within 24 hours after order. If you have any demands for RN1110MFV(TL3,T), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- RN1110MFV(TL3,T) Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
RN1110MFV(TL3,T)
| Internal Part Number | EIS-RN1110MFV(TL3,T) | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | Obsolete / Discontinued | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | Transistors (BJT) - Single, Pre-Biased | |
| Series | - | |
| Packaging | Cut Tape (CT) | |
| Transistor Type | NPN - Pre-Biased | |
| Current - Collector (Ic) (Max) | 100mA | |
| Voltage - Collector Emitter Breakdown (Max) | 50V | |
| Resistor - Base (R1) (Ohms) | 4.7k | |
| Resistor - Emitter Base (R2) (Ohms) | - | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 1mA, 5V | |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500µA, 5mA | |
| Current - Collector Cutoff (Max) | 100nA (ICBO) | |
| Frequency - Transition | - | |
| Power - Max | 150mW | |
| Mounting Type | Surface Mount | |
| Package / Case | SOT-723 | |
| Supplier Device Package | VESM | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | RN1110MFV(TL3,T) | |
| Related Links | RN1110MF, RN1110MFV(TL3,T) Datasheet, Toshiba Semiconductor & Storage Distributor | |
RN1110MFV(TL3,T) Details Description
Related parts for RN1110MFV(TL3,T)
 | PCA82C250/N4,112 | IC CAN TRANSCEIVER 5V HS 8-DIP | datasheet.pdf | |
 | 2324-H-RC | FIXED IND 1MH 2.4A 300 MOHM TH | datasheet.pdf | |
 | HCP1305-R68-R | FIXED IND 680NH 34A 1.7 MOHM SMD | datasheet.pdf | |
| EMM25DTAH-S189 | CONN EDGECARD 50POS R/A .156 SLD | datasheet.pdf | |
 | BK/EFF-250MA | FUSE BOARD MNT 250MA 250VAC RAD | datasheet.pdf | |
 | CD10FD221JO3F | CAP MICA 220PF 5% 500V RADIAL | datasheet.pdf | |
 | IMC1210BN560K | FIXED IND 56UH 87MA 10 OHM SMD | datasheet.pdf | |
 | 5SGXEABK3H40I3L | IC FPGA 696 I/O 1517HBGA | datasheet.pdf | |
| Y0024150K000V0L | RES 150K OHM 1/5W .005% RADIAL | datasheet.pdf | |
 | 316-93-103-41-008000 | Connector Receptacle 3 Position 0.100" (2.54mm) Gold Through Hole | datasheet.pdf | |
| LPN-RK-35SPI | INDICATION LPN-RK-35 | datasheet.pdf | |
 | XCVU095-2FFVC2104I | Field Programmable Gate Array, 1176000-Cell, PBGA2104 IC | datasheet.pdf |