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Toshiba Semiconductor & Storage RN1130MFV,L3F

RN1130MFV,L3F picture photo
Mfg. Part Number
RN1130MFV,L3F
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 50V 0.15W VESM
Datasheet Download
RN1130MFV,L3F.pdf
Availability of RN1130MFV,L3F

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.03000
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1130MFV,L3F, we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1130MFV,L3F can be shipped within 24 hours after order. If you have any demands for RN1130MFV,L3F, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1130MFV,L3F Order Process
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Specifications of RN1130MFV,L3F
Internal Part NumberEIS-RN1130MFV,L3F
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package8,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)100k
Resistor - Emitter Base (R2) (Ohms)100k
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 5mA
Current - Collector Cutoff (Max)500nA
Frequency - Transition250MHz
Power - Max150mW
Mounting TypeSurface Mount
Package / CaseSOT-723
Supplier Device PackageVESM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1130MFV,L3F
Related LinksRN1130, RN1130MFV,L3F Datasheet, Toshiba Semiconductor & Storage Distributor
RN1130MFV,L3F Details Description
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