Toshiba Semiconductor & Storage RN1310(TE85L,F)

RN1310(TE85L,F) picture photo
Mfg. Part Number
RN1310(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Single, Pre-Biased
Brief Description
TRANS PREBIAS NPN 0.1W USM
Datasheet Download
RN1310(TE85L,F).pdf
Availability of RN1310(TE85L,F)

Available Quantity

8016 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.04997
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of RN1310(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1310(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1310(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1310(TE85L,F) Order Process
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Specifications of RN1310(TE85L,F)
Internal Part NumberEIS-RN1310(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesGeneral Purpose Discrete Items
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Single, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor TypeNPN - Pre-Biased
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)4.7k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSC-70, SOT-323
Supplier Device PackageUSM
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1310(TE85L,F)
Related LinksRN1310(, RN1310(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1310(TE85L,F) Details Description
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