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Toshiba Semiconductor & Storage RN1962FE(TE85L,F)

RN1962FE(TE85L,F) picture photo
Mfg. Part Number
RN1962FE(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2NPN PREBIAS 0.1W ES6
Datasheet Download
RN1962FE(TE85L,F).pdf
Availability of RN1962FE(TE85L,F)

Available Quantity

8970 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.07627
Our Price
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EIS Components is the stocking Distributor of RN1962FE(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN1962FE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN1962FE(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN1962FE(TE85L,F) Order Process
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Specifications of RN1962FE(TE85L,F)
Internal Part NumberEIS-RN1962FE(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingCut Tape (CT)
Transistor Type2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)10k
Resistor - Emitter Base (R2) (Ohms)10k
DC Current Gain (hFE) (Min) @ Ic, Vce50 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition250MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-563, SOT-666
Supplier Device PackageES6
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN1962FE(TE85L,F)
Related LinksRN1962FE, RN1962FE(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN1962FE(TE85L,F) Details Description
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