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Toshiba Semiconductor & Storage RN2712JE(TE85L,F)

RN2712JE(TE85L,F) picture photo
Mfg. Part Number
RN2712JE(TE85L,F)
Manufacturer
Product Category
Transistors (BJT) - Arrays, Pre-Biased
Brief Description
TRANS 2PNP PREBIAS 0.1W ESV
Datasheet Download
RN2712JE(TE85L,F).pdf
Availability of RN2712JE(TE85L,F)

Available Quantity

9020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.05376
Our Price
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EIS Components is the stocking Distributor of RN2712JE(TE85L,F), we specialize in Toshiba Semiconductor & Storage all series electronic components. RN2712JE(TE85L,F) can be shipped within 24 hours after order. If you have any demands for RN2712JE(TE85L,F), Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
RN2712JE(TE85L,F) Order Process
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Specifications of RN2712JE(TE85L,F)
Internal Part NumberEIS-RN2712JE(TE85L,F)
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package4,000
Category Discrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
Series-
PackagingTape & Reel (TR)
Transistor Type2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)22k
Resistor - Emitter Base (R2) (Ohms)-
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)100nA (ICBO)
Frequency - Transition200MHz
Power - Max100mW
Mounting TypeSurface Mount
Package / CaseSOT-553
Supplier Device PackageESV
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)RN2712JE(TE85L,F)
Related LinksRN2712JE, RN2712JE(TE85L,F) Datasheet, Toshiba Semiconductor & Storage Distributor
RN2712JE(TE85L,F) Details Description
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