Rohm Semiconductor RQ3E070BNTB
- Mfg. Part Number
- RQ3E070BNTB
- Manufacturer
- Rohm Semiconductor
- Product Category
- FETs - Single
- Brief Description
- MOSFET N-CH 30V 7A HSMT8
- Datasheet Download
- RQ3E070BNTB.pdf
Availability of RQ3E070BNTB
Available Quantity
7336 Pieces
Can ship today
Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
- Marketing Price
- $ 0.11330
- Our Price
- Quote by Email
EIS Components is the stocking Distributor of RQ3E070BNTB, we specialize in Rohm Semiconductor all series electronic components. RQ3E070BNTB can be shipped within 24 hours after order. If you have any demands for RQ3E070BNTB, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
- RQ3E070BNTB Order Process
- Add Parts to RFQ form
- Submit RFQ
- We reply within 24 hours
- You confirm order
- Payment
- Ship out your order
Specifications of
RQ3E070BNTB
| Internal Part Number | EIS-RQ3E070BNTB | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Standard Package | 1 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Cut Tape (CT) | |
| FET Type | MOSFET N-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 30V | |
| Current - Continuous Drain (Id) @ 25°C | 7A (Ta) | |
| Rds On (Max) @ Id, Vgs | 27 mOhm @ 7A, 10V | |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | 8.9nC @ 10V | |
| Input Capacitance (Ciss) @ Vds | 410pF @ 15V | |
| Power - Max | 2W | |
| Mounting Type | Surface Mount | |
| Package / Case | 8-PowerVDFN | |
| Supplier Device Package | 8-HSMT (3.2x3) | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | RQ3E070BNTB | |
| Related Links | RQ3E0, RQ3E070BNTB Datasheet, Rohm Semiconductor Distributor | |
RQ3E070BNTB Details Description
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