Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-SCT2280KEC | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| Mfg Application Notes | SiC Power Devices and Modules | |
| Video File | ROHM Semiconductor SiC MOSFET Technology | |
| Featured Product | 2nd Generation High-Voltage SiC MOSFETs 1200 V Silicon Carbide (SiC) Diodes | |
| Standard Package | 360 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Tube | |
| FET Type | SiCFET N-Channel, Silicon Carbide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) | |
| Current - Continuous Drain (Id) @ 25°C | 14A (Tc) | |
| Rds On (Max) @ Id, Vgs | 364 mOhm @ 4A, 18V | |
| Vgs(th) (Max) @ Id | 4V @ 1.4mA | |
| Gate Charge (Qg) @ Vgs | 36nC @ 18V | |
| Input Capacitance (Ciss) @ Vds | 667pF @ 800V | |
| Power - Max | 108W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-247-3 | |
| Supplier Device Package | TO-247 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | SCT2280KEC | |
| Related Links | SCT22, SCT2280KEC Datasheet, Rohm Semiconductor Distributor | |
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