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Vishay/Siliconix SI2312BDS-T1-GE3

SI2312BDS-T1-GE3 picture photo
Mfg. Part Number
SI2312BDS-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 20V 3.9A SOT23-3
Datasheet Download
SI2312BDS-T1-GE3.pdf
Availability of SI2312BDS-T1-GE3

Available Quantity

23020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.10824
Our Price
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EIS Components is the stocking Distributor of SI2312BDS-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI2312BDS-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI2312BDS-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI2312BDS-T1-GE3 Order Process
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Specifications of SI2312BDS-T1-GE3
Internal Part NumberEIS-SI2312BDS-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
EDA / CAD ModelsDownload from Accelerated Designs
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Rds On (Max) @ Id, Vgs31 mOhm @ 5A, 4.5V
Vgs(th) (Max) @ Id850mV @ 250µA
Gate Charge (Qg) @ Vgs12nC @ 4.5V
Input Capacitance (Ciss) @ Vds-
Power - Max750mW
Mounting TypeSurface Mount
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageSOT-23-3 (TO-236)
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI2312BDS-T1-GE3
Related LinksSI2312BD, SI2312BDS-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI2312BDS-T1-GE3 Details Description
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