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Vishay/Siliconix SI3430DV-T1-GE3

SI3430DV-T1-GE3 picture photo
Mfg. Part Number
SI3430DV-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 1.8A 6-TSOP
Datasheet Download
SI3430DV-T1-GE3.pdf
Availability of SI3430DV-T1-GE3

Available Quantity

8020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.31560
Our Price
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EIS Components is the stocking Distributor of SI3430DV-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI3430DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3430DV-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI3430DV-T1-GE3 Order Process
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Specifications of SI3430DV-T1-GE3
Internal Part NumberEIS-SI3430DV-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C1.8A (Ta)
Rds On (Max) @ Id, Vgs170 mOhm @ 2.4A, 10V
Vgs(th) (Max) @ Id2V @ 250µA (Min)
Gate Charge (Qg) @ Vgs6.6nC @ 10V
Input Capacitance (Ciss) @ Vds-
Power - Max1.14W
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI3430DV-T1-GE3
Related LinksSI3430D, SI3430DV-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI3430DV-T1-GE3 Details Description
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