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Vishay/Siliconix SI3475DV-T1-GE3

SI3475DV-T1-GE3 picture photo
Mfg. Part Number
SI3475DV-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 200V 0.95A 6-TSOP
Datasheet Download
SI3475DV-T1-GE3.pdf
Availability of SI3475DV-T1-GE3

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

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EIS Components is the stocking Distributor of SI3475DV-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI3475DV-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI3475DV-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI3475DV-T1-GE3 Order Process
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Specifications of SI3475DV-T1-GE3
Internal Part NumberEIS-SI3475DV-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)Obsolete / Discontinued
ConditionNew & Unused, Original Sealed
PCN Obsolescence/ EOLSIL-1072014 Rev0 17/Dec/2014
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingCut Tape (CT)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C950mA (Tc)
Rds On (Max) @ Id, Vgs1.61 Ohm @ 900mA, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs18nC @ 10V
Input Capacitance (Ciss) @ Vds500pF @ 50V
Power - Max3.2W
Mounting TypeSurface Mount
Package / CaseSOT-23-6 Thin, TSOT-23-6
Supplier Device Package6-TSOP
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI3475DV-T1-GE3
Related LinksSI3475D, SI3475DV-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI3475DV-T1-GE3 Details Description
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