Vishay/Siliconix SI7784DP-T1-GE3

SI7784DP-T1-GE3 picture photo
Mfg. Part Number
SI7784DP-T1-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 30V 35A PPAK SO-8
Datasheet Download
SI7784DP-T1-GE3.pdf
Availability of SI7784DP-T1-GE3

Available Quantity

5020 Pieces

Can ship today


Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.43680
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of SI7784DP-T1-GE3, we specialize in Vishay/Siliconix all series electronic components. SI7784DP-T1-GE3 can be shipped within 24 hours after order. If you have any demands for SI7784DP-T1-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI7784DP-T1-GE3 Order Process
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Specifications of SI7784DP-T1-GE3
Internal Part NumberEIS-SI7784DP-T1-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Featured ProductN-Channel TrenchFET® Gen III Power MOSFETs with TurboFET™
PCN Obsolescence/ EOLMosfet EOL 24/Jun/2015
PCN Assembly/OriginMultiple Fabracation Changes09/Jul/2014
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C35A (Tc)
Rds On (Max) @ Id, Vgs6 mOhm @ 20A, 10V
Vgs(th) (Max) @ Id2.5V @ 250µA
Gate Charge (Qg) @ Vgs45nC @ 10V
Input Capacitance (Ciss) @ Vds1600pF @ 15V
Power - Max27.7W
Mounting TypeSurface Mount
Package / CasePowerPAK® SO-8
Supplier Device PackagePowerPAK® SO-8
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI7784DP-T1-GE3
Related LinksSI7784D, SI7784DP-T1-GE3 Datasheet, Vishay/Siliconix Distributor
SI7784DP-T1-GE3 Details Description
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