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Vishay/Siliconix SI8809EDB-T2-E1

SI8809EDB-T2-E1 picture photo
Mfg. Part Number
SI8809EDB-T2-E1
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET P-CH 20V 1.9A MICROFOOT
Datasheet Download
SI8809EDB-T2-E1.pdf
Availability of SI8809EDB-T2-E1

Available Quantity

5020 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.15965
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of SI8809EDB-T2-E1, we specialize in Vishay/Siliconix all series electronic components. SI8809EDB-T2-E1 can be shipped within 24 hours after order. If you have any demands for SI8809EDB-T2-E1, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SI8809EDB-T2-E1 Order Process
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Specifications of SI8809EDB-T2-E1
Internal Part NumberEIS-SI8809EDB-T2-E1
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package3,000
Category Discrete Semiconductor Products
FamilyFETs - Single
SeriesTrenchFET®
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25°C-
Rds On (Max) @ Id, Vgs90 mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id900mV @ 250µA
Gate Charge (Qg) @ Vgs15nC @ 8V
Input Capacitance (Ciss) @ Vds-
Power - Max500mW
Mounting TypeSurface Mount
Package / Case4-XFBGA
Supplier Device Package4-Microfoot
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SI8809EDB-T2-E1
Related LinksSI8809E, SI8809EDB-T2-E1 Datasheet, Vishay/Siliconix Distributor
SI8809EDB-T2-E1 Details Description
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