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Vishay/Siliconix SIHP12N65E-GE3

SIHP12N65E-GE3 picture photo
Mfg. Part Number
SIHP12N65E-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 650V 12A TO-220AB
Datasheet Download
SIHP12N65E-GE3.pdf
Availability of SIHP12N65E-GE3

Available Quantity

5050 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.99450
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of SIHP12N65E-GE3, we specialize in Vishay/Siliconix all series electronic components. SIHP12N65E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHP12N65E-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SIHP12N65E-GE3 Order Process
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Specifications of SIHP12N65E-GE3
Internal Part NumberEIS-SIHP12N65E-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage MOSFET E Series and PFC Device Selection
PCN Assembly/OriginSIL-079-2014-Rev-0 26/Sep/2014
Standard Package1,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)650V
Current - Continuous Drain (Id) @ 25°C12A (Tc)
Rds On (Max) @ Id, Vgs380 mOhm @ 6A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs70nC @ 10V
Input Capacitance (Ciss) @ Vds1224pF @ 100V
Power - Max156W
Mounting TypeThrough Hole
Package / CaseTO-220-3
Supplier Device PackageTO-220AB
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SIHP12N65E-GE3
Related LinksSIHP12N, SIHP12N65E-GE3 Datasheet, Vishay/Siliconix Distributor
SIHP12N65E-GE3 Details Description
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