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Vishay/Siliconix SIHW30N60E-GE3

SIHW30N60E-GE3 picture photo
Mfg. Part Number
SIHW30N60E-GE3
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 600V 29A TO-247AD
Datasheet Download
SIHW30N60E-GE3.pdf
Availability of SIHW30N60E-GE3

Available Quantity

5210 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 2.94400
Our Price
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QUANTITY

 

EIS Components is the stocking Distributor of SIHW30N60E-GE3, we specialize in Vishay/Siliconix all series electronic components. SIHW30N60E-GE3 can be shipped within 24 hours after order. If you have any demands for SIHW30N60E-GE3, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
SIHW30N60E-GE3 Order Process
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We reply within 24 hours
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Specifications of SIHW30N60E-GE3
Internal Part NumberEIS-SIHW30N60E-GE3
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Product Training ModulesHigh Voltage MOSFET E Series and PFC Device Selection
PCN Assembly/OriginSIL-070-2014-Rev-0 19/Jun/2014
SIL-079-2014-Rev-0 26/Sep/2014
Standard Package500
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C29A (Tc)
Rds On (Max) @ Id, Vgs125 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs130nC @ 10V
Input Capacitance (Ciss) @ Vds2600pF @ 100V
Power - Max250W
Mounting TypeThrough Hole
Package / CaseTO-3P-3 Full Pack
Supplier Device PackageTO-247AD
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)SIHW30N60E-GE3
Related LinksSIHW30N, SIHW30N60E-GE3 Datasheet, Vishay/Siliconix Distributor
SIHW30N60E-GE3 Details Description
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