Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
Internal Part Number | EIS-STD6NF10T4 | |
Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
Production Status (Lifecycle) | In Production | |
Condition | New & Unused, Original Sealed | |
Other Related Documents | STD6NF10 View All Specifications | |
Standard Package | 2,500 | |
Category | Discrete Semiconductor Products | |
Family | FETs - Single | |
Series | STripFET™ | |
Packaging | Tape & Reel (TR) | |
FET Type | MOSFET N-Channel, Metal Oxide | |
FET Feature | Standard | |
Drain to Source Voltage (Vdss) | 100V | |
Current - Continuous Drain (Id) @ 25°C | 6A (Tc) | |
Rds On (Max) @ Id, Vgs | 250 mOhm @ 3A, 10V | |
Vgs(th) (Max) @ Id | 4V @ 250µA | |
Gate Charge (Qg) @ Vgs | 14nC @ 10V | |
Input Capacitance (Ciss) @ Vds | 280pF @ 25V | |
Power - Max | 30W | |
Mounting Type | Surface Mount | |
Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
Supplier Device Package | D-Pak | |
Weight | 0.001 KG | |
Application | Email for details | |
Alternative Part (Replacement) | STD6NF10T4 | |
Related Links | STD6N, STD6NF10T4 Datasheet, ST Distributor |
ERJ-12ZYJ201U | RES SMD 200 OHM 5% 3/4W 2010 | datasheet.pdf | ||
MT8VDDT6464HY-40BF2 | MODULE DDR SDRAM 512MB 200SODIMM | datasheet.pdf | ||
V8ZT1P | VARISTOR 6V 100A DISC 7MM | datasheet.pdf | ||
TNPW12069K53BEEA | RES SMD 9.53K OHM 0.1% 1/4W 1206 | datasheet.pdf | ||
71421LA20PF8 | IC SRAM 16KBIT 20NS 64TQFP | datasheet.pdf | ||
CAT25080VI-G | IC EEPROM 8KBIT 20MHZ 8SOIC | datasheet.pdf | ||
1546980-8 | Connector Barrier Block Strip 8 Circuit 0.438" (11.12mm) | datasheet.pdf | ||
RNR60H2370FSB14 | RES 237 OHM 1/4W 1% AXIAL | datasheet.pdf | ||
RN55D57R6FRSL | RES 57.6 OHM 1/8W 1% AXIAL | datasheet.pdf | ||
657253-1 | SHEAR BLADE | datasheet.pdf | ||
CTVPS00RF-21-16SC-LC | CTV 16C 16#16 SKT RECP | datasheet.pdf | ||
CTVS07RF-11-2JE | CTV 2C 2#16 SKT J/N RECP | datasheet.pdf |