Microchip Technology TN0110N3-G-P002

TN0110N3-G-P002 picture photo
Mfg. Part Number
TN0110N3-G-P002
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 100V 350MA TO92-3
Datasheet Download
TN0110N3-G-P002.pdf
Availability of TN0110N3-G-P002

Available Quantity

5020 Pieces

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Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.72000
Our Price
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EIS Components is the stocking Distributor of TN0110N3-G-P002, we specialize in Microchip Technology all series electronic components. TN0110N3-G-P002 can be shipped within 24 hours after order. If you have any demands for TN0110N3-G-P002, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
TN0110N3-G-P002 Order Process
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Specifications of TN0110N3-G-P002
Internal Part NumberEIS-TN0110N3-G-P002
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
PCN Assembly/OriginAdditional Fabrication Site 03/Sep/2014
Fab Site Addition 14/Aug/2014
PCN PackagingLabel and Packing Changes 23/Sep/2015
Standard Package2,000
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)100V
Current - Continuous Drain (Id) @ 25°C350mA (Tj)
Rds On (Max) @ Id, Vgs3 Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id2V @ 500µA
Gate Charge (Qg) @ Vgs-
Input Capacitance (Ciss) @ Vds60pF @ 25V
Power - Max1W
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA)
Supplier Device PackageTO-92-3
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)TN0110N3-G-P002
Related LinksTN0110N, TN0110N3-G-P002 Datasheet, Microchip Technology Distributor
TN0110N3-G-P002 Details Description
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