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Toshiba Semiconductor & Storage TPN1110ENH,L1Q

TPN1110ENH,L1Q picture photo
Mfg. Part Number
TPN1110ENH,L1Q
Manufacturer
Product Category
FETs - Single
Brief Description
MOSFET N-CH 200V 7.2A 8TSON
Datasheet Download
TPN1110ENH,L1Q.pdf
Availability of TPN1110ENH,L1Q

Available Quantity

9700 Pieces

Can ship today

Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks

Marketing Price
$ 0.63648
Our Price
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EIS Components is the stocking Distributor of TPN1110ENH,L1Q, we specialize in Toshiba Semiconductor & Storage all series electronic components. TPN1110ENH,L1Q can be shipped within 24 hours after order. If you have any demands for TPN1110ENH,L1Q, Please kindly submit an RFQ here or send us an email. We will reply you as soon as possible.
TPN1110ENH,L1Q Order Process
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Specifications of TPN1110ENH,L1Q
Internal Part NumberEIS-TPN1110ENH,L1Q
Lead Free Status / RoHS StatusLead free / RoHS Compliant
Moisture Sensitivity Level (MSL)1 (Unlimited)
Production Status (Lifecycle)In Production
ConditionNew & Unused, Original Sealed
Standard Package1
Category Discrete Semiconductor Products
FamilyFETs - Single
Series-
PackagingCut Tape (CT)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C7.2A (Ta)
Rds On (Max) @ Id, Vgs114 mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id4V @ 200µA
Gate Charge (Qg) @ Vgs7nC @ 10V
Input Capacitance (Ciss) @ Vds600pF @ 100V
Power - Max39W
Mounting TypeSurface Mount
Package / Case8-PowerVDFN
Supplier Device Package8-TSON Advance
Weight0.001 KG
ApplicationEmail for details
Alternative Part (Replacement)TPN1110ENH,L1Q
Related LinksTPN1110, TPN1110ENH,L1Q Datasheet, Toshiba Semiconductor & Storage Distributor
TPN1110ENH,L1Q Details Description
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