Ship from: HONGKONG
Date Code: Newest Date Code
Manufacturer lead time 6 weeks
| Internal Part Number | EIS-VP0106N3-G | |
| Lead Free Status / RoHS Status | Lead free / RoHS Compliant | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Production Status (Lifecycle) | In Production | |
| Condition | New & Unused, Original Sealed | |
| PCN Assembly/Origin | Additional Fabrication Site 03/Sep/2014 Fab Site Addition 14/Aug/2014 | |
| PCN Packaging | Label and Packing Changes 23/Sep/2015 | |
| Standard Package | 1,000 | |
| Category | Discrete Semiconductor Products | |
| Family | FETs - Single | |
| Series | - | |
| Packaging | Bulk | |
| FET Type | MOSFET P-Channel, Metal Oxide | |
| FET Feature | Standard | |
| Drain to Source Voltage (Vdss) | 60V | |
| Current - Continuous Drain (Id) @ 25°C | 250mA (Tj) | |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 500mA, 10V | |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA | |
| Gate Charge (Qg) @ Vgs | - | |
| Input Capacitance (Ciss) @ Vds | 60pF @ 25V | |
| Power - Max | 1W | |
| Mounting Type | Through Hole | |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) | |
| Supplier Device Package | TO-92-3 | |
| Weight | 0.001 KG | |
| Application | Email for details | |
| Alternative Part (Replacement) | VP0106N3-G | |
| Related Links | VP010, VP0106N3-G Datasheet, Microchip Technology Distributor | |
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