Cambridge GaN Devices (CGD) is to lead a €10.3m project to develop intelligent GaN power modules.

Called GaNext, and part of the Penta programme, its partners include academic and commercial organisations from the UK, German and The Netherlands – Infineon is one of the partners (list below)

The modules are intended to address gate drive and EMI issues associated with fast-switching GaN power HEMTs – requiring expertise that is not yet widespread. On-substrate or in-package, they will integrate drive, control and protection circuits as well as ringing-reducing passives.

“The tailored design of the GaNext gate driver and the intimate integration in addition to the integration of auxiliary devices on the GaN integrated circuit will minimise any gate voltage distortions, which currently are a source of unreliable switching of the transistors,” according to the GaNext project profile. “Furthermore, the full potential of GaN is unlocked by the added high-speed control IC with sophisticated safety features, in addition to an advanced heat-extraction technique. Finally, integrating current and temperature sensors directly in the power module will significantly enlarge the safe operating area of the system.”

Constituents will be

• a 650V GaN-on-Si power IC with integrated sensing and driving elements
• Si and GaN low-voltage logic, control and level-shift silicon-on-insulator (SOI) gate drive circuitry
• A dedicated package

“The Penta project creates a tremendous opportunity for CGD to engage with leading-edge companies in the area of power electronics,” said CGD CEO and founder Giorgia Longobardi. “Not only will the project advance the knowledge in GaN technology and provide insights into its complex facets, but will aim at delivering prototypes in lighting, motor drives, converter blocks for renewable energies and on-board chargers for automotive.”

The project consortium spans semiconductor device design to sales of power conversion systems, including packaging, magnetic components, power systems and power products:

• UK

        Cambridge GaN Devices
        CSA Catapult
        Lyra Electronics

• Germany

        advICo microelectronics
        MACCON Elektroniksysteme
        Fraunhofer IMS
        Technische Universität Dortmund
        Infineon Technologies
        SUMIDA Components & Modules

• Netherlands

        Besi Netherlands
        Neways Technologies
        Eindhoven University of Technology
        Signify

Cambridge GaN Devices (CGD) was spun out of the High Voltage Microelectronics and Sensors group in the Department of Engineering at Cambridge University in 2016 by Longobardi and Professor Florin Udrea to develop GaN-on-silicon power semiconductors.