Toshiba has introduced eight super junction N-channel power MOSFETs to strengthen its  DTMOSVI series.

The  650V-rated devices claim to deliver a 40% reduction in terms of their drain-source on-resistance x gate-drain charge (QGD) figure of merit (FoM) when compared to the previous DTMOS generation.

As a consequence, they can raise the efficiency of switch-mode power supplies by approximately 0.36 % – thereby enabling a substantial decrease in switching losses, compared to the previous generation.

The MOSFETs are targeted at use in the switch-mode power supplies of a broad range of industrial equipment (including data center infrastructure, back-up power sources and the power conditioners of photovoltaic generators).

They will allow performance upgrades when replacing existing devices. TK110Z65Z, TK125V65Z, TK170V65Z and TK210V65Z offer a Kelvin source pin for improved control and efficiency increase potential.

The TK110N65Z and TK110Z65Z fit into TO-247 packages with 3/4 pin’s, while the TK110A65Z, TK155A65Z and TK190A65Z come in fully isolated TO-220SIS packages.

The  TK125V65Z, TK170V65Z and TK210V65Z are all housed in an 8mm x 8mm DFN package format for surface mounting. This means DTMOSVI solutions can now be sourced whatever the specific board real estate requirements are.