Author: EIS Release Date: Jul 9, 2020
Renesas has introduced a pair of 100V half-bridge mosfet gate drivers.
The high-speed, high-voltage HS pin of both devices (see diagram) is tolerant to -10V continuously and slewing up to 50V/ns. Renesas rates the integrated bootstrap diode at 0.5Ω typical.
Renesas-HIP2210-blockHIP2210. Its cousin the HIP2211 takes separate high and low PWMs, loosing control over deadtime and input threshold
The bootstrap supply is rated for operation up to 115Vdc ((120V abs max on HS). Chip supply can range across 6V to 18V (20V abs max). Vdd and boot under-voltage lock-out prevents low drive voltages to the external n-fets.
Output drive is 3A source and 4A sink with 15ns typical propagation delay and 2ns typical delay matching.
“HIP221x devices continue our 25-year heritage of ‘Harris intelligent power’ half-bridge drivers,” according to Renesas v-p Philip Chesley.
There is an evaluation kit for the HIP2210 (HIP2210EVAL1Z) designed to 60V outputs with 12V IC supply.
Applications are expected in power supplies and motor drives – for example 48V telecom power supplies, Class-D audio amplifiers, solar inverters, uninterruptable power supply inverters, and the 48V motor drives found in Li-ion battery-powered household and outdoor products, water pumps, and cooling fans.