Vishay has introduced a 30V n-channel MOSFET half-bridge power stage that combines a high side TrenchFET and low side SkyFET in a 3.3 x 3.3mm package.

Vishay-Siliconix-SiZF300DT-block

The mosfets are optimised for their respective tasks in a buck converter (see table and diagram). One has a maximum on-resistance of 4.5mΩ at 10V (7.0mΩ at 4.5V) and typically 6.9nC gate charge, and the other is 1.84mΩ at 10V (2.57mΩ at 4.5V) and typically 9.4nC.

Current rating is 20-30A, or more, depending on temperature and heatsinking – see data sheet.

“The device provides designers with a space-saving solution for point-of-load conversion, power supplies, and synchronous buck and dc-dc converters in graphic and accelerator cards, computers, servers, and telecom and RF networking equipment,” according to Vishay.

Vishay-SiZF300DT“The dual mosfet features a unique pin configuration and construction that delivers up to 11 % higher output current per current phase than competing products in the same footprint area, in addition to higher efficiency for output current above 20A.”