Vishay has introduced a 30V p-channel power mosfet with an on-resistance of 1.7mΩ at 10V, claiming it to be the first ever.

PowerPak-SO8-Vishay

Called SiRA99DP, it comes in a thermally-enhanced SO-8 package and uses the company’s fourth-generation TrenchFET process.

“Combining this low Rds(on) with a gate charge of 84nC, the SiRA99DP delivers best-in-class gate charge times on-resistance of 185mΩ.nC,” said Vishay. “As a p-channel mosfet, the device doesn’t require a charge pump to provide the positive gate bias needed by its n-channel counterparts.”

Applications are expected in circuits with a 12V input.

Use is expected as a power switch, for reverse polarity battery protection, for OR-ing power, and in motor drives.