Toshiba had developed n-channel mosfets for automotive applications, based on its U-MOSVIII-H process.

Toshiba-XPN3R804NC-mosfet

XPN3R804NC (40A abs max) and XPN7R104NC (20A) are rated for 40V operation

XPN6R706NC (40A) and XPN12006NC (20A) are rated for 60V operation

“They all exhibit extremely low on-resistance values,” according to the company, “reaching down to 3.8mΩ for the XPN3R804NC at 10V, plus minimal leakage current.”

In detail for the XPN3R804NC (according to data sheet):

• Rds(on) is typically 4.8mΩ (7.8mΩ max) with 4.5V on the gate and 10A drain current, or 3.0mΩ (3.8mΩ max) with 10V on the gate.
• Total gate charge is 35nC (10Vgate 32Vdrain 40Adrain)
• Gate leakage ±10μA (±16Vgate 0Vds)
• Drain cut-off 10μA (40Vds 0Vgs)

Packaging is surface-mount – the company’s ‘TSON Advance (WF)’ – with 3.3 x 3.6mm typical footprint (0.85mm tall), which is claimed to be able to replace some 5 x 6mm devices.

Wettable flank terminals ae included for automated optical inspection (AOI).

There are AEC-Q101-compliant and intended for use in vehicle electronic control units (ECUs), and also in switching regulators, dc-dc converters and motor drives.