GeneSiC Semiconductor of Dulles Virginia, has announced  6.5kV SiC MOSFETs for medium-voltage power conversion applications such as traction, pulsed power and smart grid infrastructure.

6.5kV SiC MOSFET bare chips available now are designated  G2R300MT65-CAL and G2R325MS65-CAL.

Full SiC modules using the technology are soon to be released.

Applications are expected to include traction, pulsed power, smart grid infrastructure and other medium-voltage power converters.

The devices are:
G2R300MT65-CAL – 6.5kV 300mΩ G2RTM SiC MOSFET Bare Chip
G2R325MS65-CAL – 6.5kV 325mΩ G2RTM SiC MOSFET (with Integrated-Schottky)Bare Chip
G2R100MT65-CAL – 6.5kV 100mΩ G2RTM SiC MOSFET Bare Chip

GeneSiC’s devices have a SiC double-implanted metal oxide semiconductor (DMOSFET) device structure with a junction barrier schottky (JBS) rectifier integrated into the SiC DMOSFET unit cell.

This device can be used in a variety of power conversion circuits.

Other advantages include more efficient bi-directional performance, temperature independent switching, low switching and conduction losses, reduced cooling requirements, superior long-term reliability, ease of paralleling devices and cost benefits.