Efficient Power Conversion (EPC) has launched a 170V GaN power transistor with a 6.8mΩ channel.

EPC-GaN-die
Called EPC2059, “they are designed to meet the demands of 48V – 56V server and data centre products as well as an array of consumer power supply applications for high-end computing, including gaming PCs, LCD TVs, LED TVs and LED lighting”, according to the company.
It is aiming the part at dc-dc secondary-side synchronous rectification in ac-dc power supplies between 100W and 6kW, for example 80 Plus Titanium PSUs.
CEO Alex Lidow claims one-sixth the losses and 10°C cooler running compared with a silicon mosfet with equivalent on resistance switching at 1MHz in a 400V to 48V converter.

Only available in 2.8 x 1.4mm die form, it is rated at 24A continuius and 102A pulsed.
The gate is designed to be run with 5V to turn the device on, but max gate excursion is close at +6V (and -4V).
Max gate charge is 7.4nC (85V drain, 5V gate, 10A drain) – or typically 5.7nC.
To go with the part is the 51 x 51mm EPC9098 development board that can take in up to 170V and deliver up to 17A. It has a half-bridge built from two EPC2059 transistors, plus a Texas Instruments LMG1210 gate driver.