1200 V GenX4™ XPT™ IGBTs

Author: EIS Release Date: Jan 7, 2021


IGBTs from IXYS feature reduced thermal resistance, low energy losses, fast switching, and high-current capabilities

Image of IXYS Corporation 1200 V GenX4™ XPT™ IGBTsIXYS, a Littelfuse Technology, proprietary XPT™ (eXtreme-light punch-through) thin-wafer technology and 4th generation (GenX4™) Trench IGBTs feature reduced thermal resistance, low energy losses, and fast switching. These devices also feature high-current capability which comes from a positive collector-to-emitter voltage temperature coefficient that enables designers to use multiple devices in parallel to meet the higher current requirements and low gate charges that help reduce gate driver requirements and switching losses.

Features
  • Positive thermal coefficient of VCE(sat)
  • Low Vsat, low Eon/Eoff, high surge current capability
  • Low tail current
Applications
  • Power inverters
  • Battery chargers
  • Motor drives