STGAP2SiCS Galvanically Isolated Single Gate Driver for SiC MOSFETs

Author: EIS Release Date: Jan 17, 2021


STMicroelectronics' high-voltage gate driver is manufactured with BCD6s technology

Image of STMicroelectronics STGAP2SiCS Galvanically Isolated Single Gate Driver for SiC MOSFETsSTMicroelectronics' STGAP2SiCS is a high-voltage (up to 1200 V) gate driver manufactured with BCD6s technology. It is included in 6 kV galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. It is included in the 6 kV galvanic isolated family in a compact package. Device output can sink and source up to 4 A. Prevention from cross conduction is ensured by an interlocking function. The device has dedicated input pins for each output. The logic inputs are CMOS/TTL compatible down to 3.3 V for easy interfacing with control devices. Delay matching between low-side and high-side section guarantees no cycle distortion and allows high-frequency operation. The STGAP2SiCS is available in two different configurations. The configuration with a separated output pin allows users to independently optimize turn-on and turn-off using a dedicated gate resistor. The configuration featuring a single output pin and Miller clamp function prevents gate spikes during fast commutations in half-bridge topologies.

Features
  • High-voltage rail
  • Matched propagation delay rise and fall
  • SO-8W
  • STBY
  • Dedicated SiC driver
Benefits
  • Reduce current in high-power applications, improve efficiency (losses go as I2), robustness
  • Avoid cross losses, no cycle distortion, high-frequency operation
  • Area of the system board, reliability, and BOM cost
  • Reduce consumption when required
  • Higher efficiency due to using SiC MOSFET