Based on a unique cascode configuration, UnitedSiC's UJ4C Generation 4 SiC FET series is rated at 750 V while delivering excellent performance figures of merit that lower conduction losses and increase efficiency at higher speed, all while improving overall cost-effectiveness. Switching performance and Q_rr are improved, as are E_on and E_off losses at every given R_DS(on). In addition, reduced levels in E_oss and C_oss deliver low total losses. These devices can be safely driven with standard 0 V to 12 V or 15 V gate drive voltage. Good threshold noise margin is maintained with a true 5 V threshold voltage and, like previous generations, these SiC FETs can be operated from all the typical Si IGBT, Si MOSFET, and SiC MOSFET drive voltages. They also include a built-in ESD gate protection clamp. All devices are AEC-Q101 qualified.