EVAL_2K4W_ACT_BRD_S7 Evaluation Board

Author: EIS Release Date: Feb 2, 2021


Infineon Technologies’ 2400 W, 65 kHz evaluation board has a high-efficiency and high-power density design

Image of Infineon Technologies EVAL_2K4W_ACT_BRD_S7 Evaluation BoardInfineon Technologies' evaluation board EVAL_2K4W_ACT_BRD_S7 has two important features promoting a higher added value as compared to the conventional boost PFC:

    1. Use of CoolMOS™ S7 for the active-bridge rectification to increase the efficiency
    2. Replacement of inrush-current relay with CoolMOS S7 to increase the power density

Infineon's 600 V CoolMOS S7 Superjunction MOSFET (IPT60R022S7) in TO-leadless (Pb-free) package comes with an optimized design lowering conduction losses. The 600 V CoolMOS SJ MOSFET achieves higher energy efficiency and lowers bill of material expenses. The 600 V CoolMOS S7 Superjunction MOSFET enables the best RDS(on) for the price in low-frequency switching applications, such as active bridge rectification, inverter stages, in-rush relays, PLCs, HV DC lines, power solid state relay (SSR), and solid-state circuit breakers (SSCB).

Features
  • Active-bridge CCM PFC demo board based on 600 V CoolMOS S7
  • 2400 W 65 kHz high-efficiency and high-power density design
  • Efficiency increases thanks to active-bridge line-rectification based on KIT_ACT_BRD_60R022S7
  • Lower temperature increases as compared to the standard diode's bridge solution
  • Heatsink is redundant for the bridge
  • Increased power density thanks to the adoption of 22 mΩ S7 for the pre-charge circuit
  • Bulky relay is redundant for the DC-link pre-charge

Applications

  • Power supplier (SMPS)
  • Telecom