650 V Silicon Carbide MOSFETs
Author: EIS Release Date: Mar 2, 2021
Wolfspeed's 650 V silicon carbide MOSFET features low on-state resistances and switching losses for maximum efficiency and power density
Wolfspeed's 650 V SiC MOSFETs enable smaller, lighter, and highly efficient power conversion in a wide range of power systems. The 650 V MOSFETs are optimized for high-performance power electronics applications including server power supplies, electric vehicle charging systems, energy storage systems, solar (PV) inverters, uninterruptible power supplies, and battery management systems.
Compared with silicon, Wolfspeed’s 650 V silicon carbide MOSFETs enable 75% lower switching losses, half the conduction losses, and three times higher power density.
Features
- Low on-state resistance over temperature
- Low parasitic capacitances
- Fast diode with ultra-low reverse recovery
- High temperature operation (TJ = +175°C)
- Kelvin source pin
- Industry-standard through-hole and SMT packages
- Enable new hard switching topologies (totem-pole PFC)
- Improve system efficiency with lower switching and conduction losses
- Enable high switching frequency operation
- Improve system-level power density
- Reduce system size, weight, and cooling requirements
Applications
- High-performance industrial power supplies
- Server/telecom power
- EV charging systems
- Energy storage systems (ESS)
- Uninterruptible power supplies (UPS)
- Solar (PV) inverters
- Battery management systems (BMS)