The EPC2219 from EPC is a 65 V, 3.3 Ω eGaN FET with integrated reverse gate clamp diode in a tiny 0.81 mm² footprint. To complete AEC-Q101 testing, EPC's eGaN FETs undergo rigorous environmental and bias-stress testing.

In addition to LiDAR in demanding automotive applications, the EPC2219 is perfectly suited for driving GaN FETs in radar and ultrasonic sensors, satellite reaction wheels, high-frequency DC/DC conversion, wireless power, and class-D audio.